EELS of InP Nanowire

F.D. Tichelaar
Electron energy loss spectrum (EELS) from a specific location on a 25 nm wide splitted InP nanowire. The spectrum shows a strong intensity increase at ~1.3 eV, the bulk bandgap value of InP. The inset is an high angle annular dark field (HAADF) image indicating the location where the spectrum was acquired.

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